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商品項目:16223
庫存現貨
DATE - 2023/08/28
CET N-Channel Enhancement Mode Field Effect Transistor


CEZC3062
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
•30V, 48A, RDS (ON) =6.7 mW @VGS =10V.
                RDS (ON) =8.7 mW @VGS =4.5V.
•Super high dense cell design for extremely low RDS(ON).
•High power and current handing capability.
•Pb-free lead plating ; RoHS compliant.
•Surface mount Package.
Parameter Symbol Limit Units
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS ±20 V
Drain Current-Continuous ID@RθJC 48 A
Drain Current-Continuous ID@RθJA 15 A
Drain Current-Pulsed a IDM@RθJC 192 A
Drain Current-Pulsed a IDM@RθJA 60 A
Maximum Power Dissipation PD 25 W
Operating and Store Temperature Range TJ,Tstg -55 to 150 C
 

CEZ2R04
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
•40V, 121A, RDS (ON) =2.4 mW @VGS =10V.
                  RDS (ON) =3.5 mW @VGS =4.5V.
•Super high dense cell design for extremely low RDS(ON).
•High power and current handing capability.
•Pb-free lead plating ; RoHS compliant.
•Halogen Free.
•Surface mount Package.
Parameter Symbol Limit Units
Drain-Source Voltage VDS 40 V
Gate-Source Voltage VGS ±20 V
Drain Current-Continuous ID@RθJC 121 A
Drain Current-Continuous ID@RθJA 40 A
Drain Current-Pulsed a IDM@RθJC 484 A
Drain Current-Pulsed a IDM@RθJA 160 A
Maximum Power Dissipation PD 56 W
Single Pulsed Avalanche Energy d EAS 312.5 mJ
Single Pulsed Avalanche Current d IAS 25 A
Operating and Store Temperature Range TJ,Tstg -55 to 150 C
 
 
CEZ03R04
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
•40V, 103A, RDS (ON) =2.9 mW @VGS =10V.
                  RDS (ON) =4.2 mW @VGS =4.5V.
•Super high dense cell design for extremely low RDS(ON).
•High power and current handing capability.
•Pb-free lead plating ; RoHS compliant.
•Halogen Free.
•Surface mount Package.
Parameter Symbol Limit Units
Drain-Source Voltage VDS 40 V
Gate-Source Voltage VGS ±20 V
Drain Current-Continuous ID@RθJC 103 A
Drain Current-Continuous ID@RθJA 30 A
Drain Current-Pulsed a IDM@RθJC 412 A
Drain Current-Pulsed a IDM@RθJA 120 A
Maximum Power Dissipation PD 56 W
Single Pulsed Avalanche Energy d EAS 80 mJ
Single Pulsed Avalanche Current d IAS 40 A
Operating and Store Temperature Range TJ,Tstg -55 to 150 C
 
CEZ05C10L
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
•100V, 81A, RDS (ON) =5.5 mW @VGS =10V.
                  RDS (ON) =8.7 mW @VGS =4.5V.
•Super high dense cell design for extremely low RDS(ON).
•High power and current handing capability.
•Pb-free lead plating ; RoHS compliant.
•Halogen Free.
•Surface mount Package.
Parameter Symbol Limit Units
Drain-Source Voltage VDS 100 V
Gate-Source Voltage VGS ±20 V
Drain Current-Continuous ID@RθJC 81 A
Drain Current-Continuous ID@RθJA 20 A
Drain Current-Pulsed a IDM@RθJC 324 A
Drain Current-Pulsed a IDM@RθJA 80 A
Maximum Power Dissipation PD 83 W
Operating and Store Temperature Range TJ,Tstg -55 to 150 C
 

CEZ07C04L
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
•40V, 296A, RDS (ON) =0.7 mW @VGS =10V.
                  RDS (ON) =1.1 mW @VGS =4.5V.
•Super high dense cell design for extremely low RDS(ON).
•High power and current handing capability.
•Pb-free lead plating ; RoHS compliant.
•Halogen Free.
•Surface mount Package.
Parameter Symbol Limit Units
Drain-Source Voltage VDS 40 V
Gate-Source Voltage VGS ±20 V
Drain Current-Continuous ID@RθJC 296 A
Drain Current-Continuous ID@RθJA 72 A
Drain Current-Pulsed a IDM@RθJC 1184 A
Drain Current-Pulsed a IDM@RθJA 288 A
Maximum Power Dissipation PD 104 W
Operating and Store Temperature Range TJ,Tstg -55 to 150 C
 
CEZ09C04H
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
•40V, 222A, RDS (ON) =1.05 mW @VGS =10V.
•Super high dense cell design for extremely low RDS(ON).
•High power and current handing capability.
•Pb-free lead plating ; RoHS compliant.
•Halogen Free.
•Surface mount Package.
Parameter Symbol Limit Units
Drain-Source Voltage VDS 40 V
Gate-Source Voltage VGS ±20 V
Drain Current-Continuous ID@RθJC 222 A
Drain Current-Continuous ID@RθJA 60 A
Drain Current-Pulsed a IDM@RθJC 888 A
Drain Current-Pulsed a IDM@RθJA 240 A
Maximum Power Dissipation PD 83 W
Operating and Store Temperature Range TJ,Tstg -55 to 150 C
 
CED22N60SF/CEU22N60SF
N-Channel Enhancement Mode Field Effect Transistor
With Fast Body Diode
FEATURES
650V@TJ max, 19A, RDS(ON) =134mW @VGS =10V.
•Super high dense cell design for extremely low RDS(ON).
•High power and current handing capability.
•Pb-free lead plating ; RoHS compliant.
•Halogen Free.
Fast reverse recovery time.
TO-251 & TO-252 package.
Parameter Symbol Limit Units
Drain-Source Voltage VDS 600 V
Gate-Source Voltage VGS ±30 V
Drain Current-Continuous @ TC = 25 C 
                                   @ TC = 100 C
ID 19
12
A
Drain Current-Pulsed a IDM 76 A
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
PD 125
1
W
W/ C
Single Pulsed Avalanche Energy d EAS 81 mJ
Single Pulsed Avalanche Current d IAS 4.5 A
Operating and Store Temperature Range TJ,Tstg -55 to 150 C
 
CEZ25R06L
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
•60V, 118A, RDS (ON) =2.5 mW @VGS =10V.
                  RDS (ON) =4.1 mW @VGS =4.5V.
•Super high dense cell design for extremely low RDS(ON).
•High power and current handing capability.
•Pb-free lead plating ; RoHS compliant.
•Halogen Free.
•Surface mount Package.
Parameter Symbol Limit Units
Drain-Source Voltage VDS 60 V
Gate-Source Voltage VGS ±20 V
Drain Current-Continuous ID@RθJC 118 A
Drain Current-Continuous ID@RθJA 30 A
Drain Current-Pulsed a IDM@RθJC 412 A
Drain Current-Pulsed a IDM@RθJA 120 A
Maximum Power Dissipation PD 83 W
Operating and Store Temperature Range TJ,Tstg -55 to 150 C