友順科技股份有限公司成立於1990年，專注致力於類比IC及離散式組件
Discrete研發、設計、製造、封裝、測試及行銷業務。
為提供客戶完整的解決方案及具價格競爭優勢，公司經營策略采IDM資源垂直整合，
期望能給予客戶最佳選擇，並創造客戶最大之經濟效益。

 IDM採取主動的方式，從產品的研發、設計、製造、封裝、測試到品牌行銷，
在每一個關鍵點都充分掌握其自主的能力，以達到產能保障及技術自主，充分展現企業競爭力。

友順科技具有完整類比元件產品線，產品以 IC為主(涵蓋Power Management、Amplifier / Comparator、 Analog Switches、 Hall ICs 、Special Application ICs、 Logic等)，Discrete為輔(涵蓋Transistors、MOSFETs、TRIACs、SCRs、DIODEs等)，主要產品廣泛應用於通訊產品如行動電話，智慧型電話、LNB、衛星導航裝置、無線通訊設備；消費性電子產品如MP3及PMP、數位相機、可攜式裝置、液晶電視及面板產品等； PC如筆記型電腦、顯示器、鍵盤、無線滑鼠 、主機板、VGA卡、電源供應器、DC FAN、Adapter、外接式硬碟儲存設備及電腦週邊產品等相關市場。
 

2023年新產品資訊
Model Name	Type	DESCRIPTION	FEATURES
UHS351G	OMNIPOLAR HALL-EFFECT DIGITAL POSITION SENSOR
ULV2361G	HIGH-PERFORMANCE LOW-VOLTAGE OPERATIONAL AMPLIFIERS
M54147G	CMOS LEAKAGE PROTECTION CIRCUIT	The UTC M54147 is a high performance electric leakage protector special circuit. Including the internal voltage regulator, amplifier, comparator, driver and controller circuit of trip. The peripheral decoupling coil, voltage sensitive resistor, zener diode, diode, resistors, capacitors and other components.	* AC power supply * Drive SCR, the output pulse width greater than 30ms * Used to detect the A and AC signal * Same higher accuracy for different leakage signal * Excellent immunity to EMC * 110V~220V(50~60Hz)
UPSR104G	HIGH PRECISION CC/CV PRIMARY-SIDE PWM CONTROLLER	The UTC UPSR104 is a primary controller mode charger and adapter applications. The controlled variable is transferred by an auxiliary winding from the secondary to the primary side. The device integrates PWM controller to enhance the performance of discontinuous conduction mode (DCM) flyback converters. The UTC UPSR104 operates in primary-side sensing and regulation. Opto-coupler and TL431 could be eliminated. It also provides off-time modulation to linearly decrease PWM frequency under light-load conditions so that low standby power can be achieved. The UTC UPSR104 achieves high precision CV/CC regulation and high power efficiency. It offers comprehensive protection coverage with auto-recovery features including Cycle-by-cycle current limiting, VDD over voltage protection, VDD clamp, OTP, leading edge blanking, VDD under voltage lockout, etc.	* ±5% Constant Voltage Regulation at Universal AC input * High Precision Constant Current Regulation at Universal AC input * Primary-side Sensing and Regulation Without TL431 and Opto-coupler * Programmable CV and CC Regulation * Adjustable Constant Current and Output Power Setting * Built-in Secondary Constant Current Control with Primary Side Feedback * Built-in Adaptive Current Peak Regulation * Built-in Primary winding inductance compensation * Programmable Cable drop Compensation * Power on Soft-start * Built-in Leading Edge Blanking (LEB) * Cycle-by-Cycle Current Limiting * VDD Under Voltage Lockout with Hysteresis (UVLO) * VDD OVP * VDD Clamp
UTGS20N65Q	Power MOSFET	The UTC UTGS20N65Q is an Trench Field-Stop Insulated Gate Bipolar Transistor. it uses UTC’s advanced technology to provide customers with high switching speed, low saturation voltage and low switching loss, etc. The UTC UTGS20N65Q is suitable for the resonant or soft switching applications.	* High switching speed * High avalanche ruggedness * Low saturation voltage: VCE(SAT).Typ.=1.6V @ IC=20A, VGE=15V (TC =25°C)
13NM100	SJ  MOS	The UTC 13NM100 is an Super Junction MOSFET Structure. It uses UTC advanced planar stripe, DMOS technology to provide customers perfect switching performance, minimal on-state resistance. The UTC 13NM100 is universally applied in electronic lamp ballasts based on half bridge topology, high efficiency switched mode power supplies, active power factor correction, etc.	* RDS(ON) ≤ 0.6 Ω @ VGS=10V, ID=6.5A * High switching speed * High breakdown voltage
UT136N03H	Power MOSFET
UT7407	Power MOSFET
UT70N04H	Power MOSFET
2NN50G-SE1	Power MOSFET
UT30NN04	POWER MOS
UT30NN04H	POWER MOS
UT40NP03	POWER MOS
4N120-E3	Planar MOS
3N150-E3	Planar MOS
15NM100	SJ  MOS
24NM90L-Q	SJ MOS
50NM90-Q	SJ MOS
UT80P04	MOS
UTG15N65-S	TRENCH FIELD-STOP IGBT
UT3N06G-Q	MOS
UT80N03L	MOS
9NM65ZG	SJ MOS
9NM70ZG	SJ MOS
UT25P02VG	MOS
2N120	Planar Power MOSFET	The UTC 2N120 provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.	* RDS(ON) ≤ 7.5 Ω @ VGS=10V, ID=1.0A * Low Reverse Transfer Capacitance * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness
2N120-E2	Planar Power MOSFET	The UTC 2N120-E2 provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.	* RDS(ON) ≤ 8.0 Ω @ VGS=10V, ID=1.0A * Low Reverse Transfer Capacitance * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness
2N120-E4	Planar Power MOSFET	The UTC 2N120-E4 provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.	* RDS(ON) ≤ 10 Ω @ VGS=10V, ID=1.0A * Low Reverse Transfer Capacitance * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness
3N120-E4	Planar Power MOSFET	The UTC 3N120-E4 provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.	* RDS(ON) ≤ 6.5 Ω @ VGS=10V, ID=1.5A * Low Reverse Transfer Capacitance * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness
4N120-E4	Planar Power MOSFET	The UTC 4N120-E4 provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.	* RDS(ON) ≤ 5.5 Ω @ VGS=10V, ID=2.0A * Low Reverse Transfer Capacitance * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness
4N120	Planar Power MOSFET	The UTC 4N120 provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.	* RDS(ON) ≤ 4.0 Ω @ VGS=10V, ID=2.0A * Low Reverse Transfer Capacitance * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness n SYMBOL n ORDERING INFORMATION Ordering Number
5N120	Planar Power MOSFET	The UTC 5N120 provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.	* RDS(ON) ≤ 3.1Ω @ VGS=10V, ID=2.5A * Low Reverse Transfer Capacitance * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness
6N120	Planar Power MOSFET	The UTC 6N120 provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.	* RDS(ON) ≤ 2.5Ω @ VGS=10V, ID=3.0A * Low Reverse Transfer Capacitance * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness
8N120	Planar Power MOSFET	The UTC 8N120 is a N-channel enhancement MOSFET using UTC’s advanced technology to provide the customers with perfect RDS(ON), high switching speed, high current capacity and low gate charge. The UTC 8N120 is universally applied in low voltage such as automotive, high efficiency switching for AC/DC converters and DC motor control, etc.	* RDS(ON) ≤ 1.8 Ω @ VGS=10V, ID=4.0A * Low Reverse Transfer Capacitance * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness
9N120-E3	Planar Power MOSFET	The UTC 9N120-E3 provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.	* RDS(ON) ≤ 1.8 Ω @ VGS=10V, ID=4.5A * Low Reverse Transfer Capacitance * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness
9N120	Planar Power MOSFET	The UTC 9N120 is a N-channel enhancement MOSFET using UTC’s advanced technology to provide the customers with perfect RDS(ON), high switching speed, high current capacity and low gate charge. The UTC 9N120 is universally applied in low voltage such as automotive, high efficiency switching for AC/DC converters and DC motor control, etc.	* RDS(ON) ≤ 1.8 Ω @ VGS=10V, ID=4.5A * Low Reverse Transfer Capacitance * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness
12N120-E2	Planar Power MOSFET	The UTC 12N120-E2 provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.	* RDS(ON) ≤ 1.6 Ω @ VGS=10V, ID=6.0A * Low Reverse Transfer Capacitance * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness
15N120-E3	Planar Power MOSFET	The UTC 15N120-E3 provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.	* RDS(ON) ≤ 1.2 Ω @ VGS=10V, ID=7.5A * Low Reverse Transfer Capacitance * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness n SYMBOL n ORDERING INFORMATION Ordering Number
1N150-E4	Planar Power MOSFET	The UTC 1N150-E4 provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.	* RDS(ON) ≤ 16 Ω @ VGS=10V, ID=0.5A * Low Reverse Transfer Capacitance * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness
2N150	Planar Power MOSFET	The UTC 2N150 provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.	* RDS(ON) ≤ 13 Ω @ VGS=10V, ID=1.0A * Low Reverse Transfer Capacitance * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness
2N150-E4	Planar Power MOSFET	The UTC 2N150-E4 provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.	* RDS(ON) ≤ 10 Ω @ VGS=10V, ID=1.0A * Low Reverse Transfer Capacitance * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness
3N150-E4	Planar Power MOSFET	The UTC 3N150-E4 provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.	* RDS(ON) ≤ 8.5 Ω @ VGS=10V, ID=1.5A * Low Reverse Transfer Capacitance * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness
4N150	Planar Power MOSFET	The UTC 4N150 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient AC to DC converters and bridge	* RDS(ON) ≤ 6.5 Ω @ VGS=10V, ID=2.0A * High Switching Speed * 100% Avalanche Tested
4N150-P	Planar Power MOSFET	The UTC 4N150-P is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient AC to DC converters and bridge circuits.	* RDS(ON) ≤ 5.0 Ω @ VGS=10V, ID=2.0A * High Switching Speed
6N150-E2	Planar Power MOSFET	The UTC 6N150-E2 provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.	* RDS(ON) ≤ 4.0 Ω @ VGS=10V, ID=3.0A * Low Reverse Transfer Capacitance * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness n SYMBOL n ORDERING INFORMATION Ordering Number
8N150	Planar Power MOSFET	The UTC 8N150 provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.	* RDS(ON) ≤ 2.4 Ω @ VGS=10V, ID=4.0A * Low Reverse Transfer Capacitance * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness
9N150	Planar Power MOSFET	The UTC 9N150 provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.	* RDS(ON) ≤ 2.3 Ω @ VGS=10V, ID=4.5A * Low Reverse Transfer Capacitance * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness
14N150-E3	Planar Power MOSFET	The UTC 14N150-E3 provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.	* RDS(ON) ≤ 2.0 Ω @ VGS=10V, ID=7.0A * Low Reverse Transfer Capacitance * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness
2NM120	SJ MOSFET	The UTC 2NM120 is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at AC-DC converters for power applications.	* RDS(ON) ≤ 5.0 Ω @ VGS=10V, ID=1.0A * High Switching Speed
3NM120	SJ MOSFET	The UTC 3NM120 is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at AC-DC converters for power applications.	* RDS(ON) ≤ 3.5 Ω @ VGS=10V, ID=1.5A * High Switching Speed
3NM120-Q	SJ MOSFET	The UTC 3NM120-Q is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at AC-DC converters for power applications.	* RDS(ON) ≤ 4.0 Ω @ VGS=10V, ID=1.5A * High Switching Speed
4NM120	SJ MOSFET	The UTC 4NM120 is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at AC-DC converters for power applications.	* RDS(ON) ≤ 2.6 Ω @ VGS=10V, ID=2.0A * High Switching Speed
5NM120	SJ MOSFET	The UTC 5NM120 is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at AC-DC converters for power applications.	* RDS(ON) ≤ 2.1 Ω @ VGS=10V, ID=2.5A * High Switching Speed
6NM120	SJ MOSFET	The UTC 6NM120 is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at AC-DC converters for power applications.	* RDS(ON) ≤ 1.7 Ω @ VGS=10V, ID=3.0A * High Switching Speed
7NM120	SJ MOSFET	The UTC 7NM120 is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at AC-DC converters for power applications.	* RDS(ON) ≤ 1.4 Ω @ VGS=10V, ID=3.5A * High Switching Speed
8NM120	SJ MOSFET	The UTC 8NM120 is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at AC-DC converters for power applications.	* RDS(ON) ≤ 1.2 Ω @ VGS=10V, ID=4.0A * High Switching Speed
10NM120	SJ MOSFET	The UTC 10NM120 is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at AC-DC converters for power applications.	* RDS(ON) ≤ 0.84 Ω @ VGS=10V, ID=5.0A * High Switching Speed
12NM120	SJ MOSFET	The UTC 12NM120 is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at AC-DC converters for power applications.	* RDS(ON) ≤ 0.69 Ω @ VGS=10V, ID=6.0A * High Switching Speed
M54149	CMOS LEAKAGE PROTECTION CIRCUIT	The UTC M54149 is a high performance electric leakage protector special circuit delay function. Including the internal voltage stabilized source, amplifying circuit, a comparison circuit, tripping controller, delay circuit and tripping circuit. The peripheral decoupling coil, varistor, zener diode, diode, resistors, capacitors and other components.	* AC power supply * Drive SCR, the output pulse width greater than 30ms * Used to detect the A and AC signal * Same higher accuracy for different leakage signal * Delay by external capacitor * 110V~220V(50~60Hz) * Width temperature range (TA=-30~+85°C) * Available in SOP14 packages
L8565	HIGH PERFORMANCE POWER FACTOR CORRECTION CONTROLLER IN CONTINUOUS CONDUCTION MODE	The UTC L8565 is a wide input range controller integrated circuit for active power factor correction. The circuit is designed for boost PFC application, and requires reduced external component count. Its power supply is recommended to be provided by an external auxiliary supply which will switch on and off the IC. The circuit operates in the continuous conduction mode under average current, and in discontinuous conduction mode only in light load condition. The switching frequency can be set with the external resistor at pin 4. Both current and voltage loop compensations are done externally to allow full user control. There are many kinds of protection features incorporated to make sure of safe system operation conditions, such as brown-out protection, output under voltage detection and peak current limitation. The inside reference is adjusted (5V±2%) to make sure control level and precise protection. There is a particular soft-start function to limit the start up current and thus reduces the stress on the boost diode.	* Supports wide input range * Average current control * Ease of use with few external components * External current and voltage loop compensation * Trimmed internal reference voltage (5V±2%) * Programmable operating/switching frequency * (50kHz ~ 250kHz) * Max duty cycle of 95% (typ) at 125kHz * Under voltage lockout * Cycle by cycle peak current limiting * Over-voltage protection * Open loop detection * Output under-voltage detection * Brown-out protection * Soft Over current Protection * Enhanced dynamic response
M2120	OPERATIONAL AMPLIFIER WITH SWITCH	The UTC M2120 is a dual operational amplifier of 2-INPUT and 1-OUTPUT with analog switch. The UTC M2120 can be used as analog switch, as Switch + Amp in order that each gain (A or B) can be adjusted independently. The UTC M2120 is suitable for Audio, Video, Electrical musical instrument…etc.	* Analog Switch Function * Operating Voltage: ±2.5V ~ ±18V * Slew Rate: 1.2V/μs typ. * Wide Unity Gain Bandwidth: 3.5 MHz typ.
14N150-E3	Planar MOS	The UTC 14N150-E3 provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.	* RDS(ON) ≤ 2.0 Ω @ VGS=10V, ID=7.0A * Low Reverse Transfer Capacitance * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness
15N120-E3	Planar MOS	The UTC 15N120-E3 provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.	* RDS(ON) ≤ 1.2 Ω @ VGS=10V, ID=7.5A * Low Reverse Transfer Capacitance * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness
24NM80-Q	SJ  MOS	The UTC 24NM80-Q is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at AC-DC converters for power applications.	* RDS(ON) ≤ 0.23 Ω @ VGS=10V, ID=12A * Fast switching capability * Avalanche energy tested * Improved dv/dt capability, high ruggedness
9N120-E3	Planar MOS	The UTC 9N120-E3 provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.	* RDS(ON) ≤ 1.8 Ω @ VGS=10V, ID=4.5A * Low Reverse Transfer Capacitance * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness
UTG40N65	IGBT	The UTC UTG40N65 is an Trench Field-Stop Insulated Gate Bipolar Transistor. it uses UTC’s advanced technology to provide customers with high switching speed, low saturation voltage and low switching loss, etc. The UTC UTG40N65 is suitable for the resonant or soft switching applications.	* High switching speed * High avalanche ruggedness * Low saturation voltage: VCE(SAT).Typ.=1.6V @ IC=40A, VGE=15V (TC =25°C)
UT3P03Z	MOSFET	The UT3P03Z uses UTC advanced technology to provide excellent RDS(ON), low gate charge and operated with low gate voltages. This device can be applied to general-purpose switching devices applications.	* RDS(ON) ≤ 100 mΩ @ VGS=-10V, ID=-1.5A RDS(ON) ≤ 140 mΩ @ VGS=-4.5V, ID=-1.5A * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness
30NM90-Q	SJ MOS	The UTC 30NM90-Q is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at AC-DC converters for power applications.	* RDS(ON) ≤ 300 mΩ @ VGS=10V, ID=15A * High Switching Speed * 100% Avalanche Tested
UT6637G	MOS	The UTC UT6637 is P-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with ideal for low voltage inverter applications. The UTC UT6637 is suitable for high efficiency synchronous rectification in SMPS, UPS, hard switched and high frequency circuits.	* RDS(ON) ≤ 12 mΩ @ VGS=-10V, ID=-27.5A RDS(ON) ≤ 18 mΩ @ VGS=-4.5V, ID=-27.5A * High Cell Density Trench Technology * High Power and Current Handling Capability
UTG20N65-S	TRENCH FIELD-STOP IGBT	The UTC UTG20N65-S is an Trench Field-Stop Insulated Gate Bipolar Transistor. it uses UTC’s advanced =technology to provide customers with high switching speed, low saturation voltage and low switching loss, etc. The UTC UTG20N65-S is suitable for the resonant or soft switching applications.	* High switching speed * High avalanche ruggedness * Low saturation voltage: VCE(SAT).Typ.=1.7V @ IC=20A, VGE=15V (TC =25°C)
3N120-E3	MOSFET	The UTC 3N120-E3 provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.	* RDS(ON) ≤ 7.0 Ω @ VGS=10V, ID=1.5A * Low Reverse Transfer Capacitance * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness
2N150-E3	MOSFET	The UTC 2N150-E3 provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.	* RDS(ON) ≤ 13 Ω @ VGS=10V, ID=1.0A * Low Reverse Transfer Capacitance * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness
1N150-E4	MOSFET	The UTC 1N150-E4 provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.	* RDS(ON) ≤ 16 Ω @ VGS=10V, ID=0.5A * Low Reverse Transfer Capacitance * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness
2N120-E4	MOSFET	The UTC 2N120-E4 provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.	* RDS(ON) ≤ 10 Ω @ VGS=10V, ID=1.0A * Low Reverse Transfer Capacitance * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness
2N150-E4	MOSFET	The UTC 2N150-E4 provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.	* RDS(ON) ≤ 10 Ω @ VGS=10V, ID=1.0A * Low Reverse Transfer Capacitance * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness
3N120-E4	MOSFET	The UTC 3N120-E4 provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.	* RDS(ON) ≤ 6.5 Ω @ VGS=10V, ID=1.5A * Low Reverse Transfer Capacitance * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness
UTG50N65-S	TRENCH FIELD-STOP IGBT	The UTC UTG50N65-S is an Trench Field-Stop Insulated Gate Bipolar Transistor. it uses UTC’s advanced technology to provide customers with high switching speed, low saturation voltage and low switching loss, etc. The UTC UTG50N65-S is suitable for the resonant or soft switching applications.	* High switching speed * High avalanche ruggedness * Low saturation voltage: VCE(SAT).Typ.=1.7V @ IC=50A, VGE=15V (TC =25°C)
UTG80N65-S	TRENCH FIELD-STOP IGBT	The UTC UTG80N65-S is an Trench Field-Stop Insulated Gate Bipolar Transistor. it uses UTC’s advanced technology to provide customers with high switching speed, low saturation voltage and low switching loss, etc. The UTC UTG80N65-S is suitable for the resonant or soft switching applications.	* High switching speed * High avalanche ruggedness * Low saturation voltage: VCE(SAT).Typ.=1.7V @ IC=80A, VGE=15V (TC =25°C)
UTG70N65-S	TRENCH FIELD-STOP IGBT	The UTC UTG70N65-S is an Trench Field-Stop Insulated Gate Bipolar Transistor. it uses UTC’s advanced technology to provide customers with high switching speed, low saturation voltage and low switching loss, etc. The UTC UTG70N65-S is suitable for the resonant or soft switching applications.	* High switching speed * High avalanche ruggedness * Low saturation voltage: VCE(SAT).Typ.=1.7V @ IC=70A, VGE=15V (TC =25°C)
UTG60N65-S	TRENCH FIELD-STOP IGBT	The UTC UTG60N65-S is an Trench Field-Stop Insulated Gate Bipolar Transistor. it uses UTC’s advanced technology to provide customers with high switching speed, low saturation voltage and low switching loss, etc. The UTC UTG60N65-S is suitable for the resonant or soft switching applications.	* High switching speed * High avalanche ruggedness * Low saturation voltage: VCE(SAT).Typ.=1.7V @ IC=60A, VGE=15V (TC =25°C)
UTG45N65-S	TRENCH FIELD-STOP IGBT	The UTC UTG45N65-S is an Trench Field-Stop Insulated Gate Bipolar Transistor. it uses UTC’s advanced technology to provide customers with high switching speed, low saturation voltage and low switching loss, etc. The UTC UTG45N65-S is suitable for the resonant or soft switching applications.	* High switching speed * High avalanche ruggedness * Low saturation voltage: VCE(SAT).Typ.=1.7V @ IC=45A, VGE=15V
UTG35N65-S	TRENCH FIELD-STOP IGBT	The UTC UTG35N65-S is an Trench Field-Stop Insulated Gate Bipolar Transistor. it uses UTC’s advanced technology to provide customers with high switching speed, low saturation voltage and low switching loss, etc. The UTC UTG35N65-S is suitable for the resonant or soft switching applications.	* High switching speed * High avalanche ruggedness * Low saturation voltage: VCE(SAT).Typ.=1.7V @ IC=35A, VGE=15V (TC =25°C)
UTG30N65-S	TRENCH FIELD-STOP IGBT	The UTC UTG30N65-S is an Trench Field-Stop Insulated Gate Bipolar Transistor. it uses UTC’s advanced technology to provide customers with high switching speed, low saturation voltage and low switching loss, etc. The UTC UTG30N65-S is suitable for the resonant or soft switching applications.	* High switching speed * High avalanche ruggedness * Low saturation voltage: VCE(SAT).Typ.=1.7V @ IC=30A, VGE=15V (TC =25°C)