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- 0201 1% 1/20W
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- 0402 1% 1/16W
- 0402 5% 1/16W
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- 0603 0.1% 1/10W
- 0603 0.5% 1/10W
- 0603 1% 1/10W
- 0603 5% 1/10W
- 0805 0.1% 1/4W
- 0805 0.1% 1/8W
- 0805 0.5% 1/8W
- 0805 1% 1/8W
- 0805 5% 1/8W
- 1206 0.5% 1/4W
- 1206 1% 1/4W
- 1206 1% 1/2W
- 1206 1% 1W
- 1206 5% 1/4W
- 1206 5% 1/2W
- 1210 1% 1/2W
- 1210 5% 0.33W
- 1210 5% 1/2W
- 1218 5% 1W
- 1225 5% 3W
- 1812 5% 3/4W
- 2010 1% 3/4W
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- 2010 1% 1W
- 2010 5% 1/2W
- 2010 5% 3/4W
- 2512 1% 1W
- 2512 1% 2W
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首頁 > 產品介紹
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P Channel CEU6601A 60V 16A TO-252
| 附件下載 | |
| 商品名稱 | P-Channel Enhancement Mode Field Effect Transistor |
| 訂購數量 | |
| 依數量訂價 | 8 NTD |
| FLYiNG 零件編號 | ICCEU6601ACET |
| FLYiNG 庫存現貨 | 30 |
| 製造商 | CET |
| 製造商零件編號 | CEU6601A |
| 說明 | P Channel CEU6601A 60V 16A TO-252 |
| 無鉛狀態 / RoHS 指令狀態 | RoHS |
| 訂購數量 | NTD 單價 / PCS |
| 1~9 | 8 |
| 10~99 | 6 |
| 電晶體類型 | P-Channel Enhancement Mode Field Effect Transistor |
| 製造商 | CET |
| 原廠料號 | CEU6601A |
| 漏-源電壓VDS | -60V |
| 閘-源電壓VS | ±20V |
| 漏極電流ID | -16A |
| 漏-源擊穿電壓BVDSS | -60V |
| 閘極閥值電壓VGS(TH) | -1~ -3V |
| 功耗 | 43W |
| 工作溫度 | -55°C ~ 175°C |
| 無鉛狀態RoHS | RoHS |
| 安裝類型 | SMD 表面黏著式 |
| 封裝／外殼 | TO-252(D-PAK) |
| 標準包裝數量 | 80/Tube,2500/Reel,5000/Box |
| 重量 | 325mg |
CED6601A/CEU6601A
P-Channel Enhancement Mode Field Effect Transistor
FEATURES
CED6601A/CEU6601A
P溝道增強型場效應晶體管
特徵
P-Channel Enhancement Mode Field Effect Transistor
FEATURES
- -60V, -16A, RDS(ON) = 86mOhm @VGS = -10V.
RDS(ON) = 125mOhm @VGS = -4.5V. - Super high dense cell design for extremely low RDS(ON).
- High power and current handing capability.
- RoHS compliant.
- TO-251 & TO-252 package.
CED6601A/CEU6601A
P溝道增強型場效應晶體管
特徵
- -60V，-16A，RDS(ON) = 86mOhm @VGS = -10V。
RDS(ON) = 125mOhm @VGS = -4.5V。 - 超高密度電池設計，可實現極低的 RDS(ON)。
- 高功率和電流處理能力。
- 符合 RoHS 標準。
- TO-251 & TO-252 封裝。
