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- 1210 5% 0.33W
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N Channel Product CEZ06R10SL 100V 22A P-PAK 5X6
| 附件下載 | |
| 商品名稱 | N-Channel Enhancement Mode Field Effect Transistor |
| 訂購數量 | |
| 依數量訂價 | 22 NTD |
| FLYiNG 零件編號 | ICCEZ06R10SLCET |
| FLYiNG 庫存現貨 | 50 |
| 製造商 | CET |
| 製造商零件編號 | CEZ06R10SL |
| 說明 | N Channel Product CEZ06R10SL 100V 22A P-PAK 5X6 |
| 無鉛狀態 / RoHS 指令狀態 | RoHS |
| 訂購數量 | NTD 單價 / PCS |
| 1~9 | 22 |
| 10~99 | 18 |
| Power MOSFET | N-Channel Enhancement Mode Field Effect Transistor |
| 製造商 | CET |
| 系列 | CEZ06R10SL |
| 原廠料號 | CEZ06R10SL |
| 漏-源電壓VDS | 100V |
| 閘-源電壓 VGS | ±20V |
| 漏極電流ID | 22A |
| 漏-源擊穿電壓BVDSS | 100V |
| 閘極閥值電壓VGS(TH) | 1~3V |
| 功耗 | 62.5W |
| 工作溫度 | -55 to 150 °C |
| 無鉛狀態 RoHS | RoHS |
| 安裝類型 | SMD 表面黏著式 |
| 封裝／外殼 | P-PAK 5X6 |
| 標準包裝數量 | 2500/Reel,5000/Box |
CEZ06R10SL
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
CEZ06R10SL
N溝道增強型場效應晶體管
特徵.jpg)
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N-Channel Enhancement Mode Field Effect Transistor
FEATURES
- 100V, 70A, RDS(ON) = 7.2mohm @VGS = 10V.
RDS(ON) = 10.5mohm @VGS = 4.5V. - Super high dense cell design for extremely low RDS(ON).
- High power and current handing capability.
- RoHS compliant.
- Surface mount Package.
CEZ06R10SL
N溝道增強型場效應晶體管
特徵
- 100V，70A，RDS(ON) = 7.2mohm @VGS = 10V。
RDS(ON) = 10.5mohm @VGS = 4.5V。 - 超高密度電池設計，可實現極低的 RDS(ON)。
- 高功率和電流處理能力。
- 符合 RoHS 標準。
- 表面貼裝封裝。
